small signal mosfet 20 v, 238 ma, single, n-channel, gate esd protection features ? low gate charge for fast switching ? small 1.6 x 1.6 mm footprint ? esd protected gate ? pb-free package is available applications ? power management load switch ? level shift ? portable applications such as cell phones, media players, digital cameras, pda's, video games, hand held computers, etc. maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain-to-source voltage v dss 20 v gate-to-source voltage v gs 10 v continuous drain current (note 1) steady state = 25 c i d 238 ma power dissipation (note 1) steady state = 25 c p d 300 mw pulsed drain current t p 10 s i dm 714 ma operating junction and storage temperature t j , t stg -55 to 150 c continuous source current (body diode) i sd 238 ma lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal resistance ratings parameter symbol max unit junction-to-ambient C steady state (note 1) r ja 416 c/w 1. surface-mounted on fr4 board using 1 in sq. pad size (cu area = 1.127 in sq. [1 oz] including traces). 2.2 @ 2.5 v r ds(on) typ @ v gs i d max (note 1) v (br)dss 1.5 @ 4.5 v 20 v 238 ma (top view) sc-89 (3-leads) drain gate 3 1 2 source marking diagram tf = specific device code m = month code tf 1 3 2 device package shipping ordering information pin connections LNTA4001NT1G sc-89 3000 tape & reel lnta4001nt3g sc-89 10000 tape & reel sc-89 LNTA4001NT1G leshan radio company, ltd. m esd protected:1500v esd protected:2000v ? rev .o 1/5
electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain-to-source breakdown voltage v (br)dss v gs = 0 v, i d = 100 a 20 v zero gate voltage drain current i dss v gs = 0 v, v ds = 20 v 1.0 a gate-to-source leakage current i gss v ds = 0 v, v gs = 10 v 100 a on characteristics (note 2) gate threshold voltage v gs(th) v ds = 3 v, i d = 100 a 0.5 1.0 1.5 v drain-to-source on resistance r ds(on) v gs = 4.5 v, i d = 10 ma 1.5 3.0 v gs = 2.5 v, i d = 10 ma 2.2 3.5 forward transconductance g fs v ds = 3 v, i d = 10 ma 50 ms capacitances input capacitance c iss v ds = 5 v, f = 1 mhz, v gs = 0 v 11.5 20 pf output capacitance c oss 10 15 reverse transfer capacitance c rss 3.5 6.0 switching characteristics (note 3) turn-on delay time t d(on) v gs = 4.5 v, v ds = 5 v, i d = 10 ma, r g = 10 13 ns rise time t r 15 ns turn-off delay time t d(off) 98 fall time t f 60 drain-source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 10 ma 0.66 0.8 v 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. LNTA4001NT1G leshan radio company, ltd. rev .o 2/5
typical performance curves 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0 0.4 0.8 1.2 1.6 2 vds, drain-to-source voltage (v) i d , drain current (a) figure 1. on-region characteristics v gs = 10 v v gs = 5 v v gs = 2.8 v v gs = 2 v v gs = 2.4 v v gs = 1.4 v v gs = 1.2 v . t j = 25 c 0 0.04 0.08 0.12 0.16 0.2 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v gs , gate-to-source voltage (v) i d , drain current (a) figure 2. transfer characteristics t j = 25 c t j = -55 c t j = 125 c vds = 5 v 0.5 1 1.5 2 2.5 0 0.05 0.1 0.15 0.2 rds (on) , drain-to-source resistance ( ) i d , drain current (a) figure 3. on-resistance versus drain current and temperature v gs = 4.5 v t j = 125 c t j = 25 c t j = -55 c 0.5 1 1.5 2 2.5 0 0.05 0.1 0.15 0.2 rds (on) , drain-to-source resistance ( ) i d , drain current (a) figure 4. on-resistance versus drain current and gate voltage v gs = 2.5 v v gs = 4.5 v t j = 25 c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 rds (on) , drain-to-source resistance (normalized) t j , junction temperature ( c) figure 5. on-resistance variation with temperature i d = 0.01 a v gs = 4.5 v 0 5 10 15 20 1 10 100 1000 i dss , leakage (na) v ds , drain-to-source voltage (v) figure 6. drain-to-source leakage current versus voltage t j = 125 c t j = 150 c v gs = 0 v LNTA4001NT1G leshan radio company, ltd. rev .o 3/5
typical performance curves 0 5 10 15 20 25 10 5 0 5 10 15 20 gate-to-source or drain-to-source voltage (v) figure 7. capacitance variation c, capacitance (pf) t j = 25 c ciss coss crss ciss crss vds v gs vds = 0 v v gs = 0 v 1 10 100 1000 1 10 100 r g , gate resistance ( ) figure 8. resistive switching time variation versus gate resistance t, time (ns) v dd = 5 v i d = 10 ma v gs = 4.5 v t d(off) t f t r t d(on) 0 0.02 0.04 0.06 0.08 0.1 0.5 0.55 0.6 0.65 0.7 0.75 0.8 v sd , source-to-drain voltage (v) figure 9. diode forward voltage versus current i s , source current (a) t j = 25 c v gs = 0 v LNTA4001NT1G leshan radio company, ltd. rev .o 4/5
LNTA4001NT1G leshan radio company, ltd. notes: 1.dimensioning and tolerancing per ansi y14.5m, 1982. 2.controlling dimension: millimeters 3.maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4.463c-01 obsolete, new standard 463c-02. sc-89 rev .o 5/5
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